PART |
Description |
Maker |
BR24L02-W BR24L02F-W BR24L02FJ-W BR24L02FV-W BR24L |
256x8 bit electrically erasable PROM 256x8位电可擦除可编程ROM 256×8 bit electrically erasable PROM 256?8 bit electrically erasable PROM
|
Rohm Co., Ltd. Rohm CO.,LTD.
|
24AA1603 24LC16B 24AA16-I/MS 24AA16-I/MSG 24AA16-I |
16K I2C垄芒 Serial EEPROM 16K I2C?/a> Serial EEPROM The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C compatible 2-wire serial interface bus. The 24LC16B features hardware write protect, Schmitt trigger in The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I<SUP>2</SUP>C ... 16K I2C Serial EEPROM
|
Microchip Technology Inc.
|
BR24L64F-W BR24L64-W1 |
8k】8 bit electrically erasable PROM 8k隆驴8 bit electrically erasable PROM
|
Rohm
|
BR24L08-W BR24L08F-W BR24L08FJ-W BR24L08FV-W BR24L |
1024×8 bit electrically erasable PROM 1024 bit electrically erasable PROM 1024位电可擦除可编程ROM
|
Rohm Co., Ltd. Rohm CO.,LTD.
|
28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
M58653P |
700 BIT ELECTRICALLY ALTERABLE ROM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
BR24L08-W07 |
1024×8 bit electrically erasable PROM
|
Rohm
|
BR34L02FV-W |
256 bit Electrically Erasable PROM 256? bit Electrically Erasable PROM
|
Rohm CO.,LTD.
|
M58658P |
320-Bit Electrically Alterable ROM
|
Mitsubishi Electric
|
M5G1400P |
1400 BIT ELECTRICALLY ALTERABLE ROM 1400位可变光盘电
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|